Stmicroelectronics
STH110N10F7-6
N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-6 package
N-channel 100 V, 4.9 mOhm typ., 110 A STripFET F7 Power MOSFET in H2PAK-6 package
PackageTO-263-7
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STH110N10F7-6 technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.117nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
No datasheet is available for this part.