N-channel Power MOSFET featuring 1200V drain-source breakdown voltage and 12A continuous drain current. Offers a typical 0.62 Ohm drain-source resistance, with a maximum of 690mR. Designed for surface mounting in an H2PAK-2 (TO-263-3) package, this component boasts a maximum power dissipation of 250W and operates within a temperature range of -55°C to 150°C. Input capacitance is 1.37nF, and the device is RoHS compliant.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STH12N120K5-2 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 620mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Height | 5mm |
| Input Capacitance | 1.37nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Packaging | Cut Tape |
| Rds On Max | 690mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ K5 |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STH12N120K5-2 Datasheet
Download the complete datasheet for Stmicroelectronics STH12N120K5-2 to view detailed technical specifications.
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