The STH130N10F3-2 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a maximum continuous drain current of 120A and a maximum drain to source breakdown voltage of 100V. The device has a maximum power dissipation of 250W and is packaged in a TO-263-3 surface mount package. The STH130N10F3-2 is RoHS compliant and suitable for use in high-reliability applications.
Sign in to ask questions about the Stmicroelectronics STH130N10F3-2 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STH130N10F3-2 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9.3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.305nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 9.3mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 17ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STH130N10F3-2 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
