Stmicroelectronics
STH130N10F3-2
N-channel 100 V, 7.8 mOhm typ., 120 A STripFET(TM) Power MOSFET in H2PAK-2 package
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power250W
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Technical Specifications
Stmicroelectronics STH130N10F3-2 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9.3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.305nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 9.3mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STH130N10F3-2 Datasheet
Download the complete datasheet for Stmicroelectronics STH130N10F3-2 to view detailed technical specifications.
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