This N-channel power MOSFET uses DeepGATE and STripFET VII technology for low conduction loss and fast switching applications. It is rated for 60 V drain-to-source voltage, 80 A continuous drain current at case temperature, and 158 W maximum power dissipation. The device provides 3 mOhm maximum on-resistance at 40 A and 10 V, 40 nC maximum gate charge at 10 V, and 2700 pF maximum input capacitance at 25 V. It is supplied in an H2PAK-2 surface-mount package with a ±20 V gate-source rating and a maximum junction temperature of 175 °C.
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Stmicroelectronics STH140N6F7-2 technical specifications.
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage | 60V |
| Continuous Drain Current | 80A |
| Power Dissipation | 158W |
| Rds On (Max) @ Id, Vgs | 3 @ 40A, 10VmOhm |
| Gate Threshold Voltage (Max) @ Id | 4 @ 250µAV |
| Gate Charge (Qg) (Max) @ Vgs | 40 @ 10VnC |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 @ 25VpF |
| Gate Source Voltage (Max) | ±20V |
| Operating Temperature | 175 (TJ)°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-2 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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