This N-channel power MOSFET uses STripFET F7 technology with an enhanced trench gate structure to achieve low on-state resistance while reducing internal capacitance and gate charge. It is rated for 60 V drain-source voltage, 80 A continuous drain current, and 158 W total dissipation at Tcase = 25 °C. The device is supplied in an H²PAK-6 package with tape-and-reel packing. It supports a maximum junction temperature of 175 °C and is intended for switching applications with strong EMI immunity and avalanche ruggedness.
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Stmicroelectronics STH140N6F7-6 technical specifications.
| Channel Type | N-channel |
| Technology | STripFET F7 |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 80A |
| Pulsed Drain Current | 320A |
| On-Resistance Max | 0.0032Ω |
| Total Power Dissipation | 158W |
| Storage Temperature Range | -55 to 175°C |
| Maximum Junction Temperature | 175°C |
| Thermal Resistance Junction-to-PCB | 35°C/W |
| Thermal Resistance Junction-to-Case | 0.95°C/W |
| Package | H²PAK-6 |
| Packaging | Tape and Reel |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
