N-channel power MOSFET featuring 100V drain-source breakdown voltage and 180A continuous drain current. Offers low 3.9 mOhm typical drain-source on-resistance, with a maximum of 4.5 mOhm. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 315W. Packaged in a surface-mount TO-263-3 (H2PAK-2) for efficient thermal management. Includes fast switching characteristics with turn-on delay of 25.6ns and fall time of 6.9ns. RoHS compliant and lead-free.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power315W
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Technical Specifications
Stmicroelectronics STH180N10F3-2 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.5MR |
| Fall Time | 6.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.8mm |
| Input Capacitance | 6.665nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 315W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 315W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 99.9ns |
| Turn-On Delay Time | 25.6ns |
| Width | 10.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STH180N10F3-2 Datasheet
Download the complete datasheet for Stmicroelectronics STH180N10F3-2 to view detailed technical specifications.
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