N-channel 40 V, 1.4 mOhm typ., 180 A STripFET F3 Power MOSFET in a H2PAK-2 package
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| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.4mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.4nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 1.7mR |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
