N-channel power MOSFET featuring 100V drain-source breakdown voltage and a low 1.9 mOhm typical on-resistance. This surface-mount device offers a high continuous drain current of 180A and a maximum power dissipation of 315W. Designed with STripFET™ VII and DeepGATE™ technology, it operates across a wide temperature range from -55°C to 175°C. The H2PAK-2 package (TO-263-3) facilitates efficient heat dissipation for demanding applications.
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| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 2.3mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.8mm |
| Input Capacitance | 12.8nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 315W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 2.5mR |
| RoHS Compliant | Yes |
| Series | StripFET™ VII, DeepGATE™ |
| Turn-Off Delay Time | 148ns |
| Turn-On Delay Time | 62ns |
| Width | 10.4mm |
| RoHS | Compliant |
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