N-channel power MOSFET featuring 100V drain-source breakdown voltage and 180A continuous drain current. Offers low on-resistance with a typical 1.9 mOhm and a maximum of 2.5 mOhm. Designed for surface mounting in an H2PAK-6 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 315W. Key switching characteristics include a 62ns turn-on delay and 40ns fall time.
Sign in to ask questions about the Stmicroelectronics STH310N10F7-6 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STH310N10F7-6 technical specifications.
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 2.1mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.8mm |
| Input Capacitance | 12.8nF |
| Lead Free | Lead Free |
| Length | 15.25mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 315W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 315W |
| Rds On Max | 2.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ VI, DeepGATE™ |
| Threshold Voltage | 3.5V |
| Turn-Off Delay Time | 148ns |
| Turn-On Delay Time | 62ns |
| Width | 10.4mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STH310N10F7-6 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
