N-channel PowerMESH™ power MOSFET featuring 1500V drain-to-source breakdown voltage and 2.5A continuous drain current. Surface mount TO-263-3 package with 9 Ohm typical drain-to-source resistance. Operates from -50°C to 150°C with 140W maximum power dissipation. Includes fast switching characteristics with turn-on delay of 24ns and fall time of 61ns.
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Stmicroelectronics STH3N150-2 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 1.5kV |
| Drain to Source Resistance | 9R |
| Drain to Source Voltage (Vdss) | 1.5kV |
| Fall Time | 61ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.8mm |
| Input Capacitance | 939pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 9R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 24ns |
| Width | 15.8mm |
| RoHS | Compliant |
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