STMICROELECTRONICS

STH3N150-2

Datasheet

N-CH 1.5kV 2.5A 9 Ohm MOSFET TO-263-3 Surface Mount

Stmicroelectronics

STH3N150-2

Name: STH3N150-2 Stmicroelectronics
Brand: Stmicroelectronics
SKU: STH3N150-2

N-CH 1.5kV 2.5A 9 Ohm MOSFET TO-263-3 Surface Mount

N-channel PowerMESH™ power MOSFET featuring 1500V drain-to-source breakdown voltage and 2.5A continuous drain current. Surface mount TO-263-3 package with 9 Ohm typical drain-to-source resistance. Operates from -50°C to 150°C with 140W maximum power dissipation. Includes fast switching characteristics with turn-on delay of 24ns and fall time of 61ns.

PackageTO-263-3

MountingSurface Mount

PolarityN-CHANNEL

Power140W

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Technical Specifications

Stmicroelectronics STH3N150-2 technical specifications.

General

Package/Case	TO-263-3
Continuous Drain Current (ID)	2.5A
Drain to Source Breakdown Voltage	1.5kV
Drain to Source Resistance	9R
Drain to Source Voltage (Vdss)	1.5kV
Fall Time	61ns
Gate to Source Voltage (Vgs)	30V
Height	4.8mm
Input Capacitance	939pF
Length	10.4mm
Max Operating Temperature	150°C
Min Operating Temperature	-50°C
Max Power Dissipation	140W
Mount	Surface Mount
Package Quantity	1000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	140W
Radiation Hardening	No
Rds On Max	9R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	PowerMESH™
Threshold Voltage	4V
Turn-Off Delay Time	45ns
Turn-On Delay Time	24ns
Width	15.8mm