N-channel power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. Offers a low 9.5mΩ typical drain-source on-resistance and 110W maximum power dissipation. Designed for surface mounting in an H2PAK-2 (TO-263-3) package, this component boasts fast switching speeds with a 19ns turn-on delay and 13ns fall time. Operates across a wide temperature range from -55°C to 175°C.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STH80N10F7-2 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.8mm |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 2 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 19ns |
| Weight | 0.139332oz |
| Width | 9.17mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STH80N10F7-2 Datasheet
Download the complete datasheet for Stmicroelectronics STH80N10F7-2 to view detailed technical specifications.
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