The STI11NM60ND is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 10A, a drain to source breakdown voltage of 600V, and a drain to source resistance of 450mR. The device is packaged in a TO-262-3 package and is mounted through a hole. It is compliant with RoHS regulations and is part of the FDmesh II series.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STI11NM60ND technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 850pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 50ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI11NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STI11NM60ND to view detailed technical specifications.
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