PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power100W
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Technical Specifications
Stmicroelectronics STI12NM50N technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 940pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI12NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STI12NM50N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.