The STI14NM50N is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 90W and a continuous drain current of 12A. The device features a drain to source breakdown voltage of 500V and a drain to source resistance of 280mR. It is packaged in a TO-262-3 through-hole package and is suitable for high-power applications.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STI14NM50N technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 280mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 816pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 320mR |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 10.2ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STI14NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STI14NM50N to view detailed technical specifications.
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