N-channel power MOSFET featuring 600V drain-source breakdown voltage and 18A continuous drain current. This MDmesh M2 series component offers a low 0.168 Ohm typical drain-source resistance. Designed for through-hole mounting in an I2PAK (TO-262-3) package, it operates from -55°C to 150°C with a maximum power dissipation of 150W. Key switching characteristics include a 14ns turn-on delay and 15ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STI24N60M2 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 168mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.35mm |
| Input Capacitance | 1.06nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 14ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI24N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STI24N60M2 to view detailed technical specifications.
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