N-channel MOSFET featuring 40V drain-source breakdown voltage and 2.1 mOhm typical drain-source resistance. This power MOSFET offers a continuous drain current of 120A and a maximum power dissipation of 330W. Designed for through-hole mounting, it utilizes an I2PAK package with dimensions of 10.75mm height, 10.4mm length, and 4.6mm width. Operating temperature range spans from -55°C to 175°C, with fast switching characteristics including a 22ns turn-on delay and 45ns fall time.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power330W
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Technical Specifications
Stmicroelectronics STI270N4F3 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 10.75mm |
| Input Capacitance | 7.4nF |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 2.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 22ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI270N4F3 Datasheet
Download the complete datasheet for Stmicroelectronics STI270N4F3 to view detailed technical specifications.
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