N-channel power MOSFET featuring 650V drain-to-source breakdown voltage and 24A continuous drain current. This through-hole component offers a low 119mΩ drain-to-source resistance. Designed for high-power applications with a 150W maximum power dissipation, it operates across a wide temperature range from -55°C to 150°C. The TO-262-3 package ensures efficient heat management.
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Stmicroelectronics STI32N65M5 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 119mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 10.75mm |
| Input Capacitance | 3.32nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 119mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 53ns |
| Width | 4.6mm |
| RoHS | Compliant |
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