STMICROELECTRONICS

STI32N65M5

Datasheet

650V 24A N-CH MOSFET 119mR TO-262 Power Transistor

Stmicroelectronics

STI32N65M5

Name: STI32N65M5 Stmicroelectronics
Brand: Stmicroelectronics
SKU: STI32N65M5

650V 24A N-CH MOSFET 119mR TO-262 Power Transistor

N-channel power MOSFET featuring 650V drain-to-source breakdown voltage and 24A continuous drain current. This through-hole component offers a low 119mΩ drain-to-source resistance. Designed for high-power applications with a 150W maximum power dissipation, it operates across a wide temperature range from -55°C to 150°C. The TO-262-3 package ensures efficient heat management.

PackageTO-262-3

MountingThrough Hole

PolarityN-CHANNEL

Power150W

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Technical Specifications

Stmicroelectronics STI32N65M5 technical specifications.

General

Package/Case	TO-262-3
Continuous Drain Current (ID)	24A
Drain to Source Breakdown Voltage	650V
Drain to Source Resistance	119mR
Drain to Source Voltage (Vdss)	650V
Fall Time	16ns
Gate to Source Voltage (Vgs)	25V
Height	10.75mm
Input Capacitance	3.32nF
Length	10.4mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	150W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	150W
Radiation Hardening	No
Rds On Max	119mR
RoHS Compliant	Yes
Series	MDmesh™ V
Turn-Off Delay Time	53ns
Turn-On Delay Time	53ns
Width	4.6mm