POWER, FET
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Stmicroelectronics STI34N65M5 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7.5ns |
| Input Capacitance | 2.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 110mR |
| RoHS Compliant | No |
| Series | MDmesh™ V |
| RoHS | Not Compliant |
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