
POWER, FET
Sign in to ask questions about the Stmicroelectronics STI34N65M5 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STI34N65M5 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7.5ns |
| Input Capacitance | 2.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 110mR |
| RoHS Compliant | No |
| Series | MDmesh™ V |
| RoHS | Not Compliant |
Download the complete datasheet for Stmicroelectronics STI34N65M5 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
