N-channel MOSFET with 650V drain-source breakdown voltage and 27A continuous drain current. Features low 98mΩ Rds(on) and 160W power dissipation. Designed for through-hole mounting in a TO-262-3 package, this component offers fast switching with a 16ns fall time and 60ns turn-on/off delay times. Operates from -55°C to 150°C, with a 4V threshold voltage and 25V gate-source voltage rating. RoHS compliant.
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Stmicroelectronics STI35N65M5 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 98mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 10.75mm |
| Input Capacitance | 3.75nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 98mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 60ns |
| Width | 4.6mm |
| RoHS | Compliant |
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