N-channel SuperMESH3™ Power MOSFET featuring 620V drain-to-source breakdown voltage and 3.8A continuous drain current. This MOSFET offers a typical 1.7 Ohm drain-to-source resistance and is housed in a TO-262-3 (I2PAK) package for through-hole mounting. Key switching characteristics include a 10ns turn-on delay and 19ns fall time, with a maximum power dissipation of 70W. Operating temperature range spans from -55°C to 150°C, and the component is RoHS compliant.
Sign in to ask questions about the Stmicroelectronics STI4N62K3 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STI4N62K3 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 620V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 10.75mm |
| Input Capacitance | 550pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STI4N62K3 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
