N-channel SuperMESH3™ Power MOSFET featuring 620V drain-to-source breakdown voltage and 3.8A continuous drain current. This MOSFET offers a typical 1.7 Ohm drain-to-source resistance and is housed in a TO-262-3 (I2PAK) package for through-hole mounting. Key switching characteristics include a 10ns turn-on delay and 19ns fall time, with a maximum power dissipation of 70W. Operating temperature range spans from -55°C to 150°C, and the component is RoHS compliant.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STI4N62K3 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 620V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 10.75mm |
| Input Capacitance | 550pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI4N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STI4N62K3 to view detailed technical specifications.
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