N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 42A continuous drain current. This component offers a low 63mΩ typical drain-source resistance and 250W maximum power dissipation. Designed for through-hole mounting in a TO-262-3 package, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 12ns fall time, 19ns turn-off delay, and 73ns turn-on delay.
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Stmicroelectronics STI57N65M5 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 63mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.35mm |
| Input Capacitance | 4.2nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 63mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 73ns |
| Width | 4.6mm |
| RoHS | Compliant |
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