Stmicroelectronics
STI6N80K5
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in an I2PAK package
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STI6N80K5 technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.6R |
| Drain to Source Voltage (Vdss) | 800V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 255pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 1.6R |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Weight | 0.073511oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI6N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STI6N80K5 to view detailed technical specifications.
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