N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 100V and continuous drain current of 65A. Features a low drain-source on-resistance of 16.5 mOhm at 10V gate-source voltage. Packaged in an I2PAK with 3 through-hole pins and a tab, offering a maximum power dissipation of 150W. Operates across a wide temperature range from -55°C to 175°C.
PackageI2PAK
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STI70N10F4 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | I2PAK |
| Package/Case | I2PAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.4 |
| Package Height (mm) | 8.95 |
| Seated Plane Height (mm) | 13.72 |
| Pin Pitch (mm) | 2.4 |
| Package Weight (g) | 1.5 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 65A |
| Maximum Drain Source Resistance | 16.5@10VmOhm |
| Typical Gate Charge @ Vgs | 65@10VnC |
| Typical Gate Charge @ 10V | 65nC |
| Typical Input Capacitance @ Vds | 3480@25VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STI70N10F4 Datasheet
Download the complete datasheet for Stmicroelectronics STI70N10F4 to view detailed technical specifications.
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