N-channel Power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. This device offers a low 7.3mΩ typical drain-source on-resistance and operates within a -55°C to +175°C temperature range. Packaged in a compact 5x6mm PowerFLAT surface-mount format, it boasts fast switching characteristics with a 27ns turn-on delay and 15ns fall time. Designed for high-efficiency applications, it supports up to 5W power dissipation and is RoHS compliant.
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| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 7.3mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 5.68nF |
| Lead Free | Lead Free |
| Length | 5.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7.3mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 27ns |
| Width | 6.35mm |
| RoHS | Compliant |
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