N-channel Power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. This device offers a low 7.3mΩ typical drain-source on-resistance and operates within a -55°C to +175°C temperature range. Packaged in a compact 5x6mm PowerFLAT surface-mount format, it boasts fast switching characteristics with a 27ns turn-on delay and 15ns fall time. Designed for high-efficiency applications, it supports up to 5W power dissipation and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STL100N10F7 technical specifications.
General
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
7.3mR
Drain to Source Voltage (Vdss)
100V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
5.68nF
Lead Free
Lead Free
Length
5.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
7.3mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
46ns
Turn-On Delay Time
27ns
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL100N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STL100N10F7 to view detailed technical specifications.
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