N-channel Power MOSFET featuring 100V drain-source breakdown voltage and 6mΩ maximum drain-source on-resistance. Delivers 107A continuous drain current with a 5W maximum power dissipation. Designed for surface mounting in a 5x6 PowerFLAT package, this component offers fast switching characteristics with a 21ns fall time, 25ns turn-on delay, and 52ns turn-off delay. Operating temperature range spans from -55°C to 175°C, with lead-free and RoHS compliance.
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Stmicroelectronics STL110N10F7 technical specifications.
General
Continuous Drain Current (ID)
107A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
6mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
6mR
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
5.117nF
Lead Free
Lead Free
Length
5.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
5W
Rds On Max
6mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
52ns
Turn-On Delay Time
25ns
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL110N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STL110N10F7 to view detailed technical specifications.
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