
N-channel Power MOSFET featuring 100V drain-source breakdown voltage and 6mΩ maximum drain-source on-resistance. Delivers 107A continuous drain current with a 5W maximum power dissipation. Designed for surface mounting in a 5x6 PowerFLAT package, this component offers fast switching characteristics with a 21ns fall time, 25ns turn-on delay, and 52ns turn-off delay. Operating temperature range spans from -55°C to 175°C, with lead-free and RoHS compliance.
Stmicroelectronics STL110N10F7 technical specifications.
| Continuous Drain Current (ID) | 107A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 6mR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 5.117nF |
| Lead Free | Lead Free |
| Length | 5.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 25ns |
| Width | 6.35mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STL110N10F7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
