N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers a low 385mΩ maximum drain-source on-resistance. Designed for surface mount applications in an 8x8mm PowerFLAT™ HV package with a height of 0.95mm. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 50ns. Rated for 90W maximum power dissipation and operates from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STL13NM60N technical specifications.
General
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
385mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
385mR
Fall Time
50ns
Gate to Source Voltage (Vgs)
25V
Height
0.95mm
Input Capacitance
790pF
Lead Free
Lead Free
Length
8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
90W
Rds On Max
385mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
85ns
Turn-On Delay Time
13ns
Width
8mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL13NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STL13NM60N to view detailed technical specifications.
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