N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers a low 385mΩ maximum drain-source on-resistance. Designed for surface mount applications in an 8x8mm PowerFLAT™ HV package with a height of 0.95mm. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 50ns. Rated for 90W maximum power dissipation and operates from -55°C to 150°C.
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| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 385mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 385mR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.95mm |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Rds On Max | 385mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 13ns |
| Width | 8mm |
| RoHS | Compliant |
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