N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 10A continuous drain current. Offers a low 375mΩ maximum drain-source on-resistance. Designed for surface mounting in a 5x6 HV PowerFLAT package, this component boasts fast switching speeds with typical fall times of 12.5ns. Operating across a wide temperature range from -55°C to 150°C, it supports up to 52W of power dissipation.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STL15N65M5 technical specifications.
General
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
375mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
375mR
Fall Time
12.5ns
Gate to Source Voltage (Vgs)
25V
Height
1mm
Input Capacitance
816pF
Lead Free
Lead Free
Length
5.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
375mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
11ns
Turn-On Delay Time
30ns
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL15N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STL15N65M5 to view detailed technical specifications.
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