N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 10A continuous drain current. Offers a low 375mΩ maximum drain-source on-resistance. Designed for surface mounting in a 5x6 HV PowerFLAT package, this component boasts fast switching speeds with typical fall times of 12.5ns. Operating across a wide temperature range from -55°C to 150°C, it supports up to 52W of power dissipation.
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| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 375mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 375mR |
| Fall Time | 12.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1mm |
| Input Capacitance | 816pF |
| Lead Free | Lead Free |
| Length | 5.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 375mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 30ns |
| Width | 6.35mm |
| RoHS | Compliant |
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