N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 12A continuous drain current. Offers a low 0.260 Ohm typical drain-source on-resistance. Designed for surface mount applications in an 8x8mm PowerFLAT™ HV package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 110W. Key switching characteristics include a 20ns turn-on delay and 40ns fall time.
Stmicroelectronics STL18NM60N technical specifications.
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 310mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 310mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.95mm |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 310mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 20ns |
| Width | 8mm |
| RoHS | Compliant |
No datasheet is available for this part.
