N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 12A continuous drain current. Offers a low 0.260 Ohm typical drain-source on-resistance. Designed for surface mount applications in an 8x8mm PowerFLAT™ HV package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 110W. Key switching characteristics include a 20ns turn-on delay and 40ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STL18NM60N technical specifications.
General
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
310mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
310mR
Fall Time
40ns
Gate to Source Voltage (Vgs)
25V
Height
0.95mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
110W
Rds On Max
310mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
50ns
Turn-On Delay Time
20ns
Width
8mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL18NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STL18NM60N to view detailed technical specifications.
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