N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 15A continuous drain current. Offers a low 210mΩ maximum drain-source on-resistance. Designed for surface mounting in an 8x8mm PowerFLAT HV package with a height of 0.95mm. Supports a maximum power dissipation of 110W and operates within a temperature range of -55°C to 150°C. Features fast switching characteristics with typical fall time of 7.5ns.
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STL22N65M5 technical specifications.
General
Continuous Drain Current (ID)
15A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
210mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
210MR
Fall Time
7.5ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
1.345nF
Lead Free
Lead Free
Length
8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
210mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
43ns
Turn-On Delay Time
43ns
Width
8mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL22N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STL22N65M5 to view detailed technical specifications.
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