N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 19.5A continuous drain current. Offers low 0.175 Ohm typical drain-to-source resistance and 150W maximum power dissipation. Includes a fast diode and operates within a -55°C to 150°C temperature range. Surface mountable in a PowerFLAT 8x8 HV package, this RoHS compliant component is designed for efficient power switching.
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Stmicroelectronics STL23NM60ND technical specifications.
General
Continuous Drain Current (ID)
19.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
600V
Fall Time
40ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
2.05nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
90ns
Turn-On Delay Time
25ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL23NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STL23NM60ND to view detailed technical specifications.
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