N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 19.5A continuous drain current. Offers low 0.175 Ohm typical drain-to-source resistance and 150W maximum power dissipation. Includes a fast diode and operates within a -55°C to 150°C temperature range. Surface mountable in a PowerFLAT 8x8 HV package, this RoHS compliant component is designed for efficient power switching.
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Stmicroelectronics STL23NM60ND technical specifications.
| Continuous Drain Current (ID) | 19.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
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