N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 19A continuous drain current. Offers a typical 0.160 Ohm drain-source on-resistance, with a maximum of 185mR. Designed for surface mounting in a PowerFLAT™ 8x8 HV package, this component boasts fast switching speeds with a 13ns turn-on delay and 50ns fall time. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 3W.
MountingSurface Mount
PolarityN-CHANNEL
Power3W
Quick Jump:
Technical Specifications
Stmicroelectronics STL26NM60N technical specifications.
General
Continuous Drain Current (ID)
19A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
185MR
Fall Time
50ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.8nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Rds On Max
185mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
85ns
Turn-On Delay Time
13ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL26NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STL26NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.