N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 19A continuous drain current. Offers a typical 0.160 Ohm drain-source on-resistance, with a maximum of 185mR. Designed for surface mounting in a PowerFLAT™ 8x8 HV package, this component boasts fast switching speeds with a 13ns turn-on delay and 50ns fall time. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 3W.
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Stmicroelectronics STL26NM60N technical specifications.
General
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 185MR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3W |
| Rds On Max | 185mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL26NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STL26NM60N to view detailed technical specifications.
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