The STL33N60M2 is a single N-channel MOSFET with a maximum drain-to-source breakdown voltage of 600V and a continuous drain current of 21.5A. It has a maximum power dissipation of 150W and a maximum operating temperature of 150°C. The device is lead-free and RoHS compliant, and is packaged in a surface mount package. It is part of the MDmesh II Plus series and has a maximum drain-to-source resistance of 135mR.
Stmicroelectronics STL33N60M2 technical specifications.
| Continuous Drain Current (ID) | 21.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 135mR |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Rds On Max | 135mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STL33N60M2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
