N-channel Power MOSFET featuring 550V drain-source breakdown voltage and 22.5A continuous drain current. Offers low 90mΩ maximum drain-source on-resistance and 150W power dissipation. Designed for surface mount applications in an 8x8mm PowerFLAT HV package, with fast switching characteristics including 13ns fall time, 45ns turn-off delay, and 56ns turn-on delay. Operates from -55°C to 150°C and is RoHS compliant.
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Stmicroelectronics STL36N55M5 technical specifications.
| Continuous Drain Current (ID) | 22.5A |
| Drain to Source Breakdown Voltage | 550V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 550V |
| Drain-source On Resistance-Max | 90mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.95mm |
| Input Capacitance | 2.67nF |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 56ns |
| Width | 8mm |
| RoHS | Compliant |
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