
N-channel Power MOSFET featuring 550V drain-source breakdown voltage and 22.5A continuous drain current. Offers low 90mΩ maximum drain-source on-resistance and 150W power dissipation. Designed for surface mount applications in an 8x8mm PowerFLAT HV package, with fast switching characteristics including 13ns fall time, 45ns turn-off delay, and 56ns turn-on delay. Operates from -55°C to 150°C and is RoHS compliant.
Stmicroelectronics STL36N55M5 technical specifications.
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