N-channel Power MOSFET featuring 550V drain-source breakdown voltage and 22.5A continuous drain current. Offers low 90mΩ maximum drain-source on-resistance and 150W power dissipation. Designed for surface mount applications in an 8x8mm PowerFLAT HV package, with fast switching characteristics including 13ns fall time, 45ns turn-off delay, and 56ns turn-on delay. Operates from -55°C to 150°C and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STL36N55M5 technical specifications.
General
Continuous Drain Current (ID)
22.5A
Drain to Source Breakdown Voltage
550V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
550V
Drain-source On Resistance-Max
90mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
25V
Height
0.95mm
Input Capacitance
2.67nF
Lead Free
Lead Free
Length
8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
90mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
45ns
Turn-On Delay Time
56ns
Width
8mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL36N55M5 Datasheet
Download the complete datasheet for Stmicroelectronics STL36N55M5 to view detailed technical specifications.
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