N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 22.5A continuous drain current. Offers a low 105mΩ typical drain-source on-resistance. Designed for surface mounting in an 8x8mm PowerFLAT HV package with a height of 0.95mm. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a 13ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
Stmicroelectronics STL38N65M5 technical specifications.
General
Continuous Drain Current (ID)
22.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
105mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
105mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
25V
Height
0.95mm
Input Capacitance
3nF
Lead Free
Lead Free
Length
8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.8W
Radiation Hardening
No
Rds On Max
105mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
9ns
Turn-On Delay Time
66ns
Width
8mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL38N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STL38N65M5 to view detailed technical specifications.
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