N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 22.5A continuous drain current. Offers a low 105mΩ typical drain-source on-resistance. Designed for surface mounting in an 8x8mm PowerFLAT HV package with a height of 0.95mm. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with a 13ns fall time.
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Stmicroelectronics STL38N65M5 technical specifications.
| Continuous Drain Current (ID) | 22.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 105mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 105mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.95mm |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Length | 8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 105mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 9ns |
| Turn-On Delay Time | 66ns |
| Width | 8mm |
| RoHS | Compliant |
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