N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 2.2A continuous drain current. Offers a low 1.8 Ohm maximum drain-source on-resistance. Designed for surface mounting in a compact PowerFLAT™ 3.3 x 3.3 HV package. Includes fast switching characteristics with typical turn-on delay of 8.6ns and fall time of 20ns. Operates across a wide temperature range from -55°C to 150°C with 22W maximum power dissipation. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Stmicroelectronics STL3NM60N technical specifications.
General
Continuous Drain Current (ID)
2.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
1.8R
Fall Time
20ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
188pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
22W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
1.8R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
20.8ns
Turn-On Delay Time
8.6ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL3NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STL3NM60N to view detailed technical specifications.
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