N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 2.2A continuous drain current. Offers a low 1.8 Ohm maximum drain-source on-resistance. Designed for surface mounting in a compact PowerFLAT™ 3.3 x 3.3 HV package. Includes fast switching characteristics with typical turn-on delay of 8.6ns and fall time of 20ns. Operates across a wide temperature range from -55°C to 150°C with 22W maximum power dissipation. RoHS compliant and lead-free.
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Stmicroelectronics STL3NM60N technical specifications.
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.8R |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 188pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 22W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 1.8R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 20.8ns |
| Turn-On Delay Time | 8.6ns |
| RoHS | Compliant |
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