Dual N-channel 30 V, 0.005 Ohm, 15 A PowerFLAT(TM) 5x6 asymmetrical double island, STripFET(TM) Power MOSFET
Sign in to ask questions about the Stmicroelectronics STL60N32N3LL datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STL60N32N3LL technical specifications.
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 950pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 9.2mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 37ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STL60N32N3LL to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
