Dual N-channel 30 V, 0.0059 Ohm typ., 19 A STripFET H5 Power MOSFET in , PowerFLAT 5x6 double island package
Stmicroelectronics STL65DN3LLH5 technical specifications.
| Continuous Drain Current (ID) | 65A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6.5MR |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 22V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| RoHS | Compliant |
No datasheet is available for this part.
