N-CHANNEL POWER MOSFET with 30V Drain to Source Breakdown Voltage and 65A Continuous Drain Current. Features 5.8mΩ Max Drain to Source On Resistance at a nominal 1V Gate to Source Voltage. Operates from -55°C to 150°C with 60W Max Power Dissipation. This surface mount component offers a 4.75mm length, 5.75mm width, and 0.88mm height, packaged on tape and reel. RoHS compliant with 4.5ns fall time and 9.3ns turn-on delay.
MountingSurface Mount
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STL65N3LLH5 technical specifications.
General
Continuous Drain Current (ID)
65A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
5.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
5.8mR
Dual Supply Voltage
30V
Fall Time
4.5ns
Gate to Source Voltage (Vgs)
22V
Height
0.88mm
Input Capacitance
1.5nF
Lead Free
Lead Free
Length
4.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
5.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
22.7ns
Turn-On Delay Time
9.3ns
Width
5.75mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL65N3LLH5 Datasheet
Download the complete datasheet for Stmicroelectronics STL65N3LLH5 to view detailed technical specifications.
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