NPN bipolar junction transistor (BJT) for general-purpose applications. Features a maximum collector-emitter voltage of 400V and a continuous collector current of 1.5A. Offers a maximum power dissipation of 1100mW. Housed in a 3-pin TO-92 plastic package with formed leads, suitable for through-hole mounting. Operates across a temperature range of -65°C to 150°C.
Stmicroelectronics STL73-AP technical specifications.
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