N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low on-resistance of 5mΩ at a nominal Vgs of 1V, with a maximum power dissipation of 80W. Designed for surface mount applications with a fast fall time of 9ns and turn-off delay of 62ns. Operates across a wide temperature range from -55°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power80W
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Technical Specifications
Stmicroelectronics STL80N4LLF3 technical specifications.
General
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
5mR
Drain to Source Voltage (Vdss)
40V
Dual Supply Voltage
40V
Fall Time
9ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
2.53nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
80W
Mount
Surface Mount
Nominal Vgs
1V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
80W
Rds On Max
5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
62ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL80N4LLF3 Datasheet
Download the complete datasheet for Stmicroelectronics STL80N4LLF3 to view detailed technical specifications.
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