N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low on-resistance of 5mΩ at a nominal Vgs of 1V, with a maximum power dissipation of 80W. Designed for surface mount applications with a fast fall time of 9ns and turn-off delay of 62ns. Operates across a wide temperature range from -55°C to 150°C.
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Stmicroelectronics STL80N4LLF3 technical specifications.
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Dual Supply Voltage | 40V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2.53nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Rds On Max | 5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 62ns |
| RoHS | Compliant |
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