N-channel power MOSFET featuring 650V drain-source breakdown voltage and 7A continuous drain current. Offers a low 600mΩ drain-source on-resistance. Designed for surface mounting with a 5.1mm x 5.1mm x 0.95mm package. Includes fast switching characteristics with 50ns turn-on delay and 11ns fall time. Rated for 70W power dissipation and RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STL8N65M5 technical specifications.
General
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
600mR
Fall Time
11ns
Gate to Source Voltage (Vgs)
25V
Height
0.95mm
Input Capacitance
690pF
Lead Free
Lead Free
Length
5.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
600mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
20ns
Turn-On Delay Time
50ns
Width
5.1mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL8N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STL8N65M5 to view detailed technical specifications.
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