N-channel power MOSFET featuring 100V drain-source breakdown voltage and 70A continuous drain current. Offers low 8mΩ maximum drain-source on-resistance and 10.5mΩ typical resistance. Operates with a 20V gate-source voltage and boasts fast switching times with a 19ns turn-on delay and 13ns fall time. Housed in a compact 5.4mm x 6.35mm x 0.95mm PowerFLAT 5x6 surface-mount package, this RoHS compliant component is suitable for high-temperature applications up to 175°C.
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STL90N10F7 technical specifications.
General
Continuous Drain Current (ID)
70A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
10.5mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
8mR
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
3.55nF
Lead Free
Lead Free
Length
5.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
10.5mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
36ns
Turn-On Delay Time
19ns
Width
6.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL90N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STL90N10F7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
