N-channel Power MOSFET featuring 30V drain-source breakdown voltage and 90A continuous drain current. Offers low on-resistance with a maximum of 4.5mΩ at 10Vgs. Designed for surface mount applications in a 5x6mm PowerFLAT package, this component boasts fast switching speeds with a 12ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 60W.
MountingSurface Mount
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STL90N3LLH6 technical specifications.
General
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
4.5mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
0.78mm
Input Capacitance
1.69nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Surface Mount
Nominal Vgs
1.7V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VI
Threshold Voltage
1.7V
Turn-Off Delay Time
37ns
Turn-On Delay Time
9.5ns
Width
6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STL90N3LLH6 Datasheet
Download the complete datasheet for Stmicroelectronics STL90N3LLH6 to view detailed technical specifications.
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