Stmicroelectronics
STL9N60M2
N-channel 600 V, 0.76 Ohm typ., 4.8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package
Resistance0.76R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STL9N60M2 technical specifications.
General
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 860mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 13.5ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 860mR |
| Resistance | 0.76R |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 8.8ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STL9N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STL9N60M2 to view detailed technical specifications.
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