P-channel JFET, SOT-223 package, featuring 60V drain-source breakdown voltage and 3A continuous drain current. Offers low on-resistance with a maximum of 130mΩ at 10V/10A. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 2.6W. Includes fast switching characteristics with turn-on delay of 6.4ns and fall time of 3.7ns. Surface mountable with tape and reel packaging.
PackageSOT-223
MountingSurface Mount
PolarityP-CHANNEL
Power2.6W
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Technical Specifications
Stmicroelectronics STN3P6F6 technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
130MR
Fall Time
3.7ns
Gate to Source Voltage (Vgs)
20V
Height
1.8mm
Input Capacitance
340pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.6W
Mount
Surface Mount
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.6W
Rds On Max
160mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VI
Threshold Voltage
-4V
Turn-Off Delay Time
14ns
Turn-On Delay Time
6.4ns
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN3P6F6 Datasheet
Download the complete datasheet for Stmicroelectronics STN3P6F6 to view detailed technical specifications.
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