NPN Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V collector-emitter breakdown voltage, 5A continuous collector current, and a 130MHz transition frequency. This surface-mount device comes in a SOT-223 package with a maximum power dissipation of 1.6W and a minimum hFE of 150. Operating temperature range is -65°C to 150°C, and it is RoHS compliant.
Frequency130MHz
PackageSOT-223
Current Rating5A
MountingSurface Mount
Quick Jump:
Technical Specifications
Stmicroelectronics STN851 technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
320mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Current Rating
5A
Emitter Base Voltage (VEBO)
7V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
1.8mm
hFE Min
150
Lead Free
Lead Free
Length
6.5mm
Max Breakdown Voltage
60V
Max Collector Current
5A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.6W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
60V
Width
3.5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STN851 Datasheet
Download the complete datasheet for Stmicroelectronics STN851 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
