N-channel superjunction power MOSFET uses MDmesh M6 technology for switching applications, LLC converters, and boost PFC converters. The device is rated for 600 V drain-source breakdown voltage, 25 A continuous drain current at 25 °C, and 125 mΩ maximum on-resistance at 10 V gate drive. The TO-LL type A package provides a separate driving source pin for improved switching behavior, with tape-and-reel packing specified. Electrical ratings include ±25 V gate-source voltage, 230 W total dissipation at 25 °C case temperature, and a -55 °C to 150 °C junction temperature range.
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| Transistor polarity | N-channel |
| Drain-source breakdown voltage | 600V |
| Continuous drain current at 25 °C case | 25A |
| Continuous drain current at 100 °C case | 15.8A |
| Pulsed drain current | 78A |
| Gate-source voltage | ±25V |
| Maximum drain-source on-resistance | 125mΩ |
| Typical drain-source on-resistance | 105mΩ |
| Gate threshold voltage | 3.25 to 4.75V |
| Total power dissipation at 25 °C case | 230W |
| Operating junction temperature range | -55 to 150°C |
| Junction-to-case thermal resistance | 0.54°C/W |
| Input capacitance | 1515pF |
| Output capacitance | 128pF |
| Reverse transfer capacitance | 4.2pF |
| Total gate charge | 33.4nC |
| Source-drain current | 25A |
| Single pulse avalanche energy | 500mJ |
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
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