This device is an N-channel power MOSFET built on STripFET F7 technology and housed in a TO-220 package. It is rated for 60 V drain-source voltage, 100 A continuous drain current at case temperature of 25 °C, and 125 W total power dissipation. The datasheet specifies a typical drain-source on-resistance of 4.7 mOhm at 10 V gate drive and a maximum of 5.6 mOhm. It also lists a gate-source voltage rating of ±20 V, operating junction temperature from -55 °C to 175 °C, and typical total gate charge of 30 nC. The part is intended for switching applications and is supplied in tube packaging.
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Stmicroelectronics STP100N6F7 technical specifications.
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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