N-channel power MOSFET featuring 40V drain-source breakdown voltage and 120A continuous drain current. Offers a low 0.0043 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, this device boasts a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 35ns and fall time of 50ns.
PackageTO-220AB
Current Rating120A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STP100NF04 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 120A |
| Current Rating | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 4.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 4.6MR |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.15mm |
| Input Capacitance | 5.1nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 4.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, STripFET™ II |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 40V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP100NF04 Datasheet
Download the complete datasheet for Stmicroelectronics STP100NF04 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
