N-channel power MOSFET featuring 40V drain-source breakdown voltage and 120A continuous drain current. Offers a low 0.0043 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, this device boasts a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 35ns and fall time of 50ns.
PackageTO-220AB
Current Rating120A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP100NF04 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
120A
Current Rating
120A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
4.6mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
4.6MR
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
5.1nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
4.6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, STripFET™ II
Threshold Voltage
4V
Turn-Off Delay Time
80ns
Turn-On Delay Time
35ns
DC Rated Voltage
40V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP100NF04 Datasheet
Download the complete datasheet for Stmicroelectronics STP100NF04 to view detailed technical specifications.
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