N-channel Power MOSFET featuring 950V Drain to Source Breakdown Voltage and 8A Continuous Drain Current. This component offers a low 0.65 Ohm typical Drain to Source Resistance and 130W Max Power Dissipation. Designed for through-hole mounting in a TO-220 package, it exhibits fast switching characteristics with a 15ns Fall Time. Operating across a wide temperature range from -55°C to 150°C, this RoHS compliant device is ideal for high-voltage applications.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power130W
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Technical Specifications
Stmicroelectronics STP10N95K5 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
950V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
630pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
130W
Rds On Max
800mR
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
51ns
Turn-On Delay Time
22ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10N95K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP10N95K5 to view detailed technical specifications.
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